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NSR0530HT1G - onsemi

Description: Very Low Forward Voltage Drop - 370 mV @ 100 mA; Low Reverse Current - 1.4 uA @ 10 V; 500 mA of Continuous Forward Current; Very High Switching Speed; Low Capacitance - CT = 10 pF; This is a Pb-Free Device

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PCB Footprints
NSR0530HT1G - onsemi PCB footprint - Small Outline Diode - Small Outline Diode - SOD-323 - case 477-02 - issue H
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NSR0530HT1G - onsemi  - 3D model - Small Outline Diode - SOD-323 - case 477-02 - issue H
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NSR0530HT1G Details

  • Manufacturer Part Number:

    NSR0530HT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-323

  • Manufacturer Package Code:

    477-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    onsemi

  • YTEOL:

    6.08

  • Application:

    EFFICIENCY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.62 V

  • JESD-30 Code:

    R-PDSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.16 W

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    30 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NSR0530HT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • The critical timing parameters include the rise and fall times, propagation delay, and pulse width. These can be ensured by using a proper PCB layout, selecting the right components, and optimizing the signal routing.
  • The device requires a specific power sequencing to prevent damage. The recommended power-up sequence is to apply the input voltage first, followed by the enable signal. The power-down sequence should be reversed.
  • The device is sensitive to ESD damage. Recommended ESD protection measures include using ESD-protected handling and storage procedures, and incorporating ESD protection devices such as TVS diodes or ESD arrays in the circuit design.

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NSR0530HT1G Overview

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