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NSV50150ADT4G - onsemi

Description: Adjustable up to 350 mA, Wide Operating Voltage Range, Immediate Turn-On, Voltage Surge Suppressing - Protecting LEDs, SBT (SelfBiased Transistor) Technology, Negative Temperature Coefficient, Eliminates Additional Regulation, These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant. ; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified

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NSV50150ADT4G Details

  • Manufacturer Part Number:

    NSV50150ADT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    8

  • Data Input Mode:

    SERIAL

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    LED DISPLAY DRIVER

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Length:

    6.54 mm

  • Moisture Sensitivity Level:

    1

  • Multiplexed Display Capability:

    NO

  • Number of Functions:

    1

  • Number of Segments:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Characteristics:

    CONSTANT-CURRENT

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SMSIP3H,.38,90TB

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    2.38 mm

  • Supply Voltage-Nom:

    7.5 V

  • Surface Mount:

    YES

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    2.29 mm

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    6.095 mm

  • fmax-Min:

    0.1 MHz

NSV50150ADT4G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and power handling. Consult with onsemi's application engineers for guidance.
  • Yes, but ensure that the device is operated within its safe operating area and that the switching frequency is within the recommended range. Also, consider the device's switching losses and thermal performance.
  • Use proper ESD handling procedures during assembly and storage. Implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the system design.

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NSV50150ADT4G Overview

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Part Image NSI50150ADT4G onsemi

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