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NSVBAS16W1T1G - onsemi

Description: Triple Diode Configuration in Small Package; Fast trr: < 3.0 ns; Low CD: < 2.0 pF; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

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PCB Footprints
NSVBAS16W1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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3D Models
NSVBAS16W1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88(SOT-363) CASE 419B-02 ISSUE Y
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NSVBAS16W1T1G Details

  • Manufacturer Part Number:

    NSVBAS16W1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    10 Weeks

  • Date Of Intro:

    2019-09-05

  • Manufacturer:

    onsemi

  • YTEOL:

    6.1

  • Application:

    ULTRA FAST RECOVERY

  • Breakdown Voltage-Min:

    100 V

  • Configuration:

    SEPARATE, 3 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    1 A

  • Number of Elements:

    3

  • Number of Phases:

    1

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.3 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    1 µA

  • Reverse Recovery Time-Max:

    0.003 µs

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

NSVBAS16W1T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using thermal interface materials and following proper soldering techniques.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the NSVBAS16W1T1G, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design. Additionally, consider using ESD-protected devices and following onsemi's ESD handling guidelines.
  • The recommended soldering techniques and profiles for the NSVBAS16W1T1G involve using a soldering iron with a temperature range of 250°C to 260°C, a soldering time of 3-5 seconds, and a peak temperature of 240°C. It's also recommended to use a solder with a melting point of 217°C to 221°C.

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NSVBAS16W1T1G Overview

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