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NSVF4015SG4T1G - onsemi

Description: Low-noise use : NF = 1.2 dB typ. (f = 1 GHz); High cut-off frequency : fT = 10 GHz typ. (VCE = 5 V); High gain : |S21e|2 = 17 dB typ. (f = 1 GHz); MCPH4 package is pin-compatible with SC-82FL; AEC-Q101 qualified and PPAP capable; Pb-Free, Halogen Free and RoHS compliance

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PCB Footprints
NSVF4015SG4T1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SC−82FL / MCPH4 CASE 419AR ISSUE O
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NSVF4015SG4T1G - onsemi  - 3D model - SO Transistor Flat Lead - SC−82FL / MCPH4 CASE 419AR ISSUE O
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NSVF4015SG4T1G Details

  • Manufacturer Part Number:

    NSVF4015SG4T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SC-82FL / MCPH-4

  • Package Description:

    SC-82FL, MCPH4, 4 PIN

  • Manufacturer Package Code:

    419AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    12 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    60

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-F4

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.45 W

  • Power Dissipation-Max (Abs):

    0.45 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10000 MHz

NSVF4015SG4T1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and storage temperature (Tstg). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to handle the device with an ESD wrist strap or mat, and to use ESD-protected packaging and storage. Additionally, consider adding external ESD protection devices, such as TVS diodes, to the PCB design.
  • Yes, the NSVF4015SG4T1G is qualified for automotive and high-reliability applications. However, it's essential to review the device's AEC-Q101 qualification and to follow the recommended design and testing guidelines for these applications.
  • The recommended soldering conditions for the NSVF4015SG4T1G include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering method that follows the IPC J-STD-020 standard.

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