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NTBLS0D8N08X - onsemi

Description: MOSFET Power, Single N-Channel, TOLL 80 V, 0.79 m, 457 A

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PCB Footprints
NTBLS0D8N08X - onsemi PCB footprint - Other - Other - H−PSOF8L 11.68x9.80_2022
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3D Models
NTBLS0D8N08X - onsemi  - 3D model - Other - H−PSOF8L 11.68x9.80_2022
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NTBLS0D8N08X Details

  • Manufacturer Part Number:

    NTBLS0D8N08X

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    530 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    457 A

  • Drain-source On Resistance-Max:

    0.00079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    55 pF

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    325 W

  • Pulsed Drain Current-Max (IDM):

    1629 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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NTBLS0D8N08X Overview

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