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NTBLS4D0N15MC - onsemi

Description: Low RDS(on); Low QG and Capacitance; Lowers Switching Noise/EMI; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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NTBLS4D0N15MC - onsemi PCB footprint - Other - Other - NTBLS4D0N15MC-3
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NTBLS4D0N15MC - onsemi  - 3D model - Other - NTBLS4D0N15MC-3
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NTBLS4D0N15MC Details

  • Manufacturer Part Number:

    NTBLS4D0N15MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-LL 8L

  • Manufacturer Package Code:

    100CU

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2020-04-03

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    332 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-299A

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    316 W

  • Pulsed Drain Current-Max (IDM):

    2255 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTBLS4D0N15MC Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated using the MOSFET's thermal resistance, voltage, and current ratings. A safe operating area can be determined by consulting the onsemi application note AND8193/D.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ideally 12V or more, depending on the specific application. This will minimize power losses and ensure the MOSFET operates in the saturation region.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10Ω and 100Ω to limit the gate current and prevent oscillations.
  • Yes, the NTBLS4D0N15MC is suitable for high-frequency switching applications up to several hundred kHz. However, the MOSFET's switching losses, gate charge, and parasitic capacitances should be carefully considered to ensure efficient operation.
  • Implement overvoltage protection using a voltage clamp or a zener diode, and overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Additionally, consider using a MOSFET with built-in protection features, such as overcurrent and overtemperature protection.

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