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NTD24N06T4G - onsemi

Description: Single N-Channel Power MOSFET 60V, 24A, 42mΩ

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NTD24N06T4G Details

  • Manufacturer Part Number:

    NTD24N06T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    162 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD24N06T4G Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTD24N06T4G is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Additionally, ensure the device is operated within the recommended temperature range.
  • For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. Follow onsemi's recommended PCB layout guidelines and thermal management strategies for the NTD24N06T4G.
  • To protect the NTD24N06T4G from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure that the device is properly grounded during assembly and testing.
  • The NTD24N06T4G is designed to meet the reliability requirements of automotive and industrial applications. The device is qualified to AEC-Q101 standards, ensuring a high level of reliability and lifespan. However, the actual lifespan will depend on various factors, including operating conditions, temperature, and usage patterns.

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NTD24N06T4G Overview

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Part Image NTD24N06 onsemi

Power Field-Effect Transistor, 24A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET