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NTE586 - NTE ELECTRONICS

Description: Diode Schottky 40V 3a Do-27 Fast Switching Vf=0.525v@3A

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NTE586 - NTE ELECTRONICS PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO27
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3D Models
NTE586 - NTE ELECTRONICS  - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO27
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NTE586 Details

  • Manufacturer Part Number:

    NTE586

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    NTE Electronics Inc

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.525 V

  • JESD-30 Code:

    O-XALF-W2

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    40 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

NTE586 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the NTE586 is not explicitly stated in the datasheet. However, based on similar transistors, it's recommended to limit the collector-emitter voltage to 60V and the collector current to 10A to ensure safe operation.
  • While the NTE586 can be used as a switch, its transition frequency (ft) is around 30MHz, which may not be suitable for very high-frequency applications. For high-frequency switching, consider using a transistor with a higher ft, such as the NTE587 or NTE588.
  • To ensure proper biasing for linear amplifier applications, follow these guidelines: 1) Choose a suitable collector-emitter voltage (Vce) based on the application's requirements. 2) Select a base-emitter voltage (Vbe) that provides the desired current gain. 3) Use a voltage divider or other biasing network to establish a stable quiescent point. 4) Verify the transistor's operating point using a load line analysis or simulation tools.
  • The thermal resistance (RθJA) of the NTE586 is not explicitly stated in the datasheet. However, based on similar transistors, a typical value for RθJA is around 25°C/W. This means that for every watt of power dissipated, the junction temperature will rise by 25°C above the ambient temperature.
  • Yes, the NTE586 can be used in a push-pull amplifier configuration. However, it's essential to ensure that the transistors are properly matched and biased to minimize crossover distortion and optimize performance. Consider using a matched pair of transistors, such as the NTE586 and NTE587, for this type of application.

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