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NTHD4102PT1G - onsemi

Description: Offers an Ultra Low RDS(ON) Solution in the ChipFET™ Package; Miniature ChipFet Package 40% Smaller Footprint than TSOP-6; Low Profile (<1.1mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics; Simplifies Circuit Designs since Additional Boost Circuits for Gate Voltages are not Required; Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology

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Symbol
NTHD4102PT1G - onsemi - PCB symbol
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PCB Footprints
NTHD4102PT1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - CASE1206A−03
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3D Models
NTHD4102PT1G - onsemi - 3D model - SO Transistor Flat Lead - CASE1206A−03
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NTHD4102PT1G Details

  • Manufacturer Part Number:

    NTHD4102PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    ChipFET

  • Pin Count:

    8

  • Manufacturer Package Code:

    1206A-03

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.9 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.1 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    75 ns

  • Turn-on Time-Max (ton):

    35 ns

NTHD4102PT1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator can be used to regulate the input voltage, and a biasing circuit with resistors and capacitors can be used to set the desired operating point.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handling the device with an ESD wrist strap or mat, and storing it in an anti-static bag can prevent damage.
  • Troubleshooting can be done by checking the input voltage, current, and temperature of the device. A thermal camera or thermometer can be used to measure the temperature, and a multimeter can be used to measure the voltage and current.
  • A PCB material with a high thermal conductivity, such as FR4 or Rogers, is recommended. A thicker PCB (e.g., 1.6 mm) can help to dissipate heat more efficiently.

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NTHD4102PT1G Overview

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