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NTHD4502NT1G - onsemi

Description: Planar Technology Device Offers Low RDS(on) and Fast Switching Speed; Leadless ChipFET™ Package has 40% Smaller Footprint than TSOP-6. Ideal Device Applications Where Board Space is at a Premium.; ChipFET™ Package Exhibits Excellent Thermal Capabilities. Ideal for Applications Where Heat Transfer is Required.

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PCB Footprints
NTHD4502NT1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - ChipFET CASE1206A−03 ISSUE K_2022
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NTHD4502NT1G - onsemi  - 3D model - SO Transistor Flat Lead - ChipFET CASE1206A−03 ISSUE K_2022
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NTHD4502NT1G Details

  • Manufacturer Part Number:

    NTHD4502NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    ChipFET

  • Pin Count:

    8

  • Manufacturer Package Code:

    1206A-03

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    40 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.13 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    30 ns

  • Turn-on Time-Max (ton):

    22 ns

NTHD4502NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • Monitor the device's junction temperature, input voltage, and output current to ensure safe operation and prevent overheating or damage.
  • Yes, the NTHD4502NT1G is designed for high-reliability applications. However, it's essential to follow the recommended operating conditions, PCB layout, and thermal management guidelines to ensure the device meets the required reliability standards.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the device from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.

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NTHD4502NT1G Overview

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Image Part Number Model
Part Image NTHD4502NT1G Rochester Electronics LLC

2200mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8

Part Image NTHD4502NT1 onsemi

Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET