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NTMD6N02R2G - onsemi

Description: Ultra Low RDS(on); Higher Efficiency Extending Battery Life; Logic Level Gate Drive; Miniature Dual SO-8 Surface Mount Package; Diode Exhibits High Speed, Soft Recovery; Avalanche Energy Specified; SO-8 Mounting Information Provided

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PCB Footprints
NTMD6N02R2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 NB CAST 751-07
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3D Models
NTMD6N02R2G - onsemi  - 3D model - Small Outline Packages - SOIC-8 NB CAST 751-07
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NTMD6N02R2G Details

  • Manufacturer Part Number:

    NTMD6N02R2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.92 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    180 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.73 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    205 ns

  • Turn-on Time-Max (ton):

    110 ns

NTMD6N02R2G Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTMD6N02R2G is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) between 2V and 5V, and the drain-source voltage (Vds) between 10V and 60V, depending on the application.
  • For optimal thermal performance, use a PCB layout that allows for good heat dissipation. This includes using a thermal pad, thermal vias, and a heat sink if necessary. Ensure the device is mounted on a thermally conductive material, and follow the recommended land pattern and soldering guidelines.
  • Yes, the NTMD6N02R2G is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize losses and ringing.
  • To protect the NTMD6N02R2G from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. During PCB assembly, use ESD-safe tools and materials to prevent damage.

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NTMD6N02R2G Overview

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