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NTMD6P02R2G - onsemi

Description: SO-8 Mounting Information Provided; Logic Level Gate Drive; Diode Exhibits High Speed, Soft Recovery; Miniature Dual SO-8 Surface Mount Package; Avalanche Energy Specified; Ultra Low RDS(on); Higher Efficiency Extending Battery Life; Pb-Free Packages are Available

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NTMD6P02R2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 NB CAST 751-07
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NTMD6P02R2G - onsemi  - 3D model - Small Outline Packages - SOIC-8 NB CAST 751-07
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NTMD6P02R2G Details

  • Manufacturer Part Number:

    NTMD6P02R2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    0.033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    450 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    235 ns

  • Turn-on Time-Max (ton):

    75 ns

NTMD6P02R2G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an internal or bottom-side copper plane.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference can be used to provide a stable input voltage, and a resistive divider or a voltage-controlled voltage source can be used to set the bias voltage.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by excessive voltage or current. Handle the device by the body or use an ESD wrist strap, and avoid touching the pins or exposing the device to moisture or extreme temperatures.
  • Use a logic analyzer or oscilloscope to monitor the device's inputs and outputs, and check the power supply and biasing circuit for any issues. Consult the datasheet and application notes for troubleshooting guidelines and common pitfalls to avoid.
  • The device has a maximum junction temperature of 150°C. Ensure good airflow, use a heat sink or thermal interface material, and consider using a thermally-enhanced package or a heat spreader to reduce thermal resistance.

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NTMD6P02R2G Overview

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