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NTMFS0D5N04XLT1G - onsemi

Description: Latest 40V Logic Gate Level Power MOSFET Technology.; Lowest On-Resistance in 5x6 package.; Less Peak Reverse Recovery Current with Good Softness Performance.; Lower Output Charge by Smaller Output Capacitance.

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NTMFS0D5N04XLT1G Details

  • Manufacturer Part Number:

    NTMFS0D5N04XLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5x6, 1.27P

  • Package Description:

    SO-8FL, DFNW5, 6 PIN

  • Manufacturer Package Code:

    506FA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1325 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    455 A

  • Drain-source On Resistance-Max:

    0.00078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    194 W

  • Pulsed Drain Current-Max (IDM):

    2474 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS0D5N04XLT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. This typically involves setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the specified ranges, and using a suitable gate driver or bias circuit.
  • Operating the device beyond the recommended temperature range can lead to reduced performance, decreased reliability, and potentially even device failure. It's essential to ensure the device operates within the specified temperature range to maintain its electrical characteristics and lifespan.
  • To handle ESD protection, follow proper handling and storage procedures, use ESD-protective packaging and materials, and implement ESD protection circuits or devices in the system design. The NTMFS0D5N04XLT1G has an integrated ESD protection diode, but additional external protection may still be necessary.
  • The reliability and lifetime expectations for the NTMFS0D5N04XLT1G are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. onsemi provides reliability data and guidelines in the datasheet and application notes. It's essential to follow these guidelines and perform thorough testing to ensure the device meets the required reliability and lifetime expectations.

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NTMFS0D5N04XLT1G Overview

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