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NTMFS10N3D2C - onsemi

Description: Shielded Gate MOSFET Technology; MSL1 Robust Package Design; Low Qrr; Soft recovery body diode; Low RDS(on); Small Footprint (5 x 6 mm); 100% UIL Tested; RoHS Compliant

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PCB Footprints
NTMFS10N3D2C - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE O
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NTMFS10N3D2C - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AF ISSUE O
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NTMFS10N3D2C Details

  • Manufacturer Part Number:

    NTMFS10N3D2C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AF

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    151 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    138 W

  • Pulsed Drain Current-Max (IDM):

    775 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    62 ns

  • Turn-on Time-Max (ton):

    61 ns

NTMFS10N3D2C Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are suggested. Refer to onsemi's application note AND9173/D for more details.
  • The device requires a stable input voltage (VIN) and a proper biasing circuit to ensure optimal performance. A recommended biasing circuit is shown in the datasheet, figure 13. Ensure the input voltage is within the recommended range (4.5V to 18V) and the biasing resistors are chosen according to the application note AND9173/D.
  • The maximum allowed power dissipation (PD) is dependent on the ambient temperature (TA) and the thermal resistance (RθJA). Refer to the datasheet, figure 5, for the power dissipation curve. Ensure the device is operated within the recommended power dissipation limits to prevent overheating.
  • Yes, the NTMFS10N3D2C is qualified for automotive and industrial applications. It meets the requirements of AEC-Q101 and is suitable for high-reliability applications. However, ensure the device is operated within the recommended specifications and follow proper design and manufacturing guidelines.
  • The NTMFS10N3D2C has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during manufacturing and assembly. Use ESD-safe materials, grounding straps, and follow the guidelines outlined in the ESD Association standard (ANSI/ESD S20.20).

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