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NTMFS1D1N04XMT1G - onsemi

Description: The latest 40V Standard Gate Level Power MOSFET Technology; Lower On-Resistance; Lower Gate Charge; Good Body Diode Softness

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PCB Footprints
NTMFS1D1N04XMT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N-2022
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3D Models
NTMFS1D1N04XMT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N-2022
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NTMFS1D1N04XMT1G Details

  • Manufacturer Part Number:

    NTMFS1D1N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    395 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.00105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47.3 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    1448 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS1D1N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the device, using a minimum of 2oz copper thickness, and ensuring a minimum of 10mm x 10mm thermal pad area. Additionally, it's recommended to use a thermal via array under the device to improve heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink or thermal management system to keep the device temperature within the recommended range.
  • The NTMFS1D1N04XMT1G has an integrated ESD protection circuit, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Additionally, consider adding external ESD protection devices, such as TVS diodes, to ensure robust ESD protection in the final application.
  • Yes, the NTMFS1D1N04XMT1G is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended qualification and testing procedures, including AEC-Q101 qualification, to ensure the device meets the required standards and specifications.
  • The recommended soldering conditions for the NTMFS1D1N04XMT1G include a peak reflow temperature of 260°C, a soldering time of 10-30 seconds, and a maximum of 3 reflow cycles. It's also recommended to use a soldering process that meets the IPC-J-STD-020 standard.

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NTMFS1D1N04XMT1G Overview

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