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NTMFS2D1N08XT1G - onsemi

Description: Low QRR, Soft Recovery Body Diode; Low RDS(on) to Minimize Conduction Losses; Low QG and Capacitance to Minimize Driver Losses; These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant

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PCB Footprints
NTMFS2D1N08XT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
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NTMFS2D1N08XT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
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NTMFS2D1N08XT1G Details

  • Manufacturer Part Number:

    NTMFS2D1N08XT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    168 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    201 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    164 W

  • Pulsed Drain Current-Max (IDM):

    866 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS2D1N08XT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a copper plane on the PCB, and using vias to dissipate heat to the other side of the board. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any gaps between the device and the heat sink.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • To protect the device from ESD, handle the device by the body or use an ESD wrist strap, and ensure that the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors on the input pins.
  • The recommended drive circuit for the gate pin involves using a low-impedance driver, such as a MOSFET driver IC, to ensure fast switching times and minimize power losses. A gate resistor value of 10-20 ohms is recommended to prevent ringing and oscillations.

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