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NTMFS4935NT1G - onsemi

Description: Obsolete - Single N-Channel Power MOSFET 30V, 93A, 3.2mΩ

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PCB Footprints
NTMFS4935NT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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3D Models
NTMFS4935NT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NTMFS4935NT1G Details

  • Manufacturer Part Number:

    NTMFS4935NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Pin Count:

    5

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    59 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    275 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMFS4935NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9093/D.
  • The NTMFS4935NT1G requires a specific biasing scheme to achieve optimal performance. A recommended biasing circuit is shown in the datasheet, but it's essential to ensure that the voltage and current limits are not exceeded. A detailed biasing guide can be found in the onsemi application note AND9093/D.
  • The NTMFS4935NT1G is a sensitive device and requires careful handling and soldering. onsemi provides a recommended soldering and handling guide in their application note AND9093/D, which includes guidelines for storage, handling, and soldering to prevent damage.
  • onsemi provides a troubleshooting guide in their application note AND9093/D, which covers common issues and their solutions. Additionally, the datasheet provides a list of possible failure modes and their causes. It's essential to follow the recommended troubleshooting procedures to identify and resolve issues quickly.
  • The NTMFS4935NT1G has undergone various environmental and reliability tests, including temperature cycling, humidity testing, and electrical overstress testing. The device is qualified according to the Automotive Electronics Council (AEC) Q100 and Q101 standards. The detailed test reports and certifications can be obtained from onsemi upon request.

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NTMFS4935NT1G Overview

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