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NTMFS5113PLT1G - onsemi

Description: Low On-Resistance; High Current Capability; Avalanche Energy Specified; RoHS Compliant

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NTMFS5113PLT1G - onsemi PCB footprint - Other - Other - NTMFS5113PLT1G-1
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NTMFS5113PLT1G - onsemi  - 3D model - Other - NTMFS5113PLT1G-1
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NTMFS5113PLT1G Details

  • Manufacturer Part Number:

    NTMFS5113PLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 5 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    315 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    415 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS5113PLT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9093/D.
  • The NTMFS5113PLT1G requires a specific biasing scheme to achieve optimal performance. A recommended biasing circuit is shown in the datasheet, but it's essential to ensure that the voltage and current limits are not exceeded. A detailed biasing guide can be found in the onsemi application note AND9093/D.
  • Onsemi provides reliability data for the NTMFS5113PLT1G, including FIT rates, MTBF, and other quality metrics. These can be found in the device's reliability report, which is available upon request from onsemi.
  • Yes, the NTMFS5113PLT1G is a sensitive device and requires proper ESD protection during handling and assembly. Onsemi recommends following standard ESD precautions, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging materials.
  • The NTMFS5113PLT1G is rated for operation up to 150°C, but the device's performance and reliability may degrade at higher temperatures. Onsemi recommends consulting the datasheet and application notes for guidance on high-temperature operation and derating the device's performance accordingly.

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