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NTMFS6B14NT1G - onsemi

Description: Obsolete - Single N−Channel Power MOSFET 100V, 50A, 14mΩ

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PCB Footprints
NTMFS6B14NT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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3D Models
NTMFS6B14NT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NTMFS6B14NT1G Details

  • Manufacturer Part Number:

    NTMFS6B14NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 5 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    29 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    77 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMFS6B14NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable input voltage (VIN) and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference should be used to provide a stable input voltage, and a bias resistor network should be used to set the desired output voltage.
  • The critical timing parameters for the NTMFS6B14NT1G include the input rise and fall times, the output rise and fall times, and the propagation delay. To ensure these parameters are met, the device should be driven by a signal source with a fast rise and fall time, and the output should be terminated with a load resistor to prevent ringing.
  • The device requires a specific power sequencing to prevent damage or malfunction. The input voltage (VIN) should be applied before the enable signal (EN), and the output voltage (VOUT) should be monitored to ensure it is stable before enabling the load.
  • The device has a maximum junction temperature (TJ) of 150°C. To ensure reliable operation, the device should be operated at a junction temperature below 125°C. A thermal design should be implemented to ensure good heat dissipation, such as using a heat sink or a thermal pad.

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NTMFS6B14NT1G Overview

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