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NTMS5P02R2G - onsemi

Description: High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency; Miniature SO-8 Surface Mount Package--Saves Board Space; Diode Exhibits High Speed with Soft Recovery; IDSS Specified at Elevated Temperature; Drain-to-Source Avalanche Energy Specified; Mounting Information for the SOIC-8 Package is Provided; RoHS Compliant

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PCB Footprints
NTMS5P02R2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 NB CAST 751-07
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NTMS5P02R2G - onsemi  - 3D model - Small Outline Packages - SOIC-8 NB CAST 751-07
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NTMS5P02R2G Details

  • Manufacturer Part Number:

    NTMS5P02R2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.12

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    7.05 A

  • Drain-source On Resistance-Max:

    0.033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    380 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.2 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    225 ns

  • Turn-on Time-Max (ton):

    85 ns

NTMS5P02R2G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are also recommended.
  • Ensure that the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Also, consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the NTMS5P02R2G is AEC-Q100 qualified, which makes it suitable for automotive and high-reliability applications. However, additional testing and validation may be required for specific use cases.
  • The NTMS5P02R2G has built-in ESD protection, but additional external protection may be necessary depending on the application. Follow proper ESD handling procedures during assembly and handling to prevent damage.

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