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NTMS7N03R2G - onsemi

Description: Single N-Channel Power MOSFET 30V, 7A, 23mΩ

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NTMS7N03R2G Details

  • Manufacturer Part Number:

    NTMS7N03R2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SOIC-8NB, 8 PIN

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    288 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    150 ns

  • Turn-on Time-Max (ton):

    215 ns

NTMS7N03R2G Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the NTMS7N03R2G can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure the NTMS7N03R2G is properly biased, follow the recommended biasing conditions outlined in the datasheet. This typically includes setting the gate-source voltage (Vgs) to the recommended value, usually around 10V, and ensuring the drain-source voltage (Vds) is within the specified range.
  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using thermal vias and a solid copper plane. Additionally, ensure good airflow around the device and consider using a heat sink if necessary. Refer to the datasheet and application notes for more detailed guidance.
  • Yes, the NTMS7N03R2G is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the PCB layout and component selection are optimized for high-frequency operation.
  • To protect the NTMS7N03R2G from ESD, follow proper handling and storage procedures, such as using anti-static bags and wrist straps. Additionally, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from electrostatic discharge.

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NTMS7N03R2G Overview

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