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NTMTS1D5N08H - onsemi

Description: Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant

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NTMTS1D5N08H - onsemi  - 3D model
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NTMTS1D5N08H Details

  • Manufacturer Part Number:

    NTMTS1D5N08H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Manufacturer Package Code:

    507AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    1536 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    255 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    31 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMTS1D5N08H Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the package, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, using multiple vias under the thermal pad can further improve heat dissipation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Proper heat sinking, thermal management, and derating the device's power dissipation at higher temperatures can also help.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to follow standard ESD protection practices, such as using ESD-sensitive handling and storage procedures, and incorporating ESD protection devices (e.g., TVS diodes) in the circuit design.
  • Yes, the NTMTS1D5N08H is qualified for automotive and high-reliability applications. However, it's essential to review the device's AEC-Q101 qualification and ensure that it meets the specific requirements of your application.
  • To troubleshoot issues related to the internal EMI filter, start by verifying that the device is properly connected and that the PCB layout is correct. Check for any signs of electrical overstress or damage. If issues persist, consult the onsemi application note AN1168 for guidance on troubleshooting EMI filter-related problems.

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NTMTS1D5N08H Overview

Use the download button to access the NTMTS1D5N08H 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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