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NTMTS6D0N15MC - onsemi

Description: Very Low RDS(on), Shielded Gate Trench Technology; Low Profile PQFN 8x8 package; Maximum junction temperature of 175C; Soft Body diode with low Qrr; RoHS Compliant

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PCB Footprints
NTMTS6D0N15MC - onsemi PCB footprint - Other - Other - NTMTS6D0N15MC-2
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NTMTS6D0N15MC - onsemi  - 3D model - Other - NTMTS6D0N15MC-2
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NTMTS6D0N15MC Details

  • Manufacturer Part Number:

    NTMTS6D0N15MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Package Description:

    QFN88, DFNW-8

  • Manufacturer Package Code:

    507AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    135 A

  • Drain-source On Resistance-Max:

    0.0064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.7 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    245 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMTS6D0N15MC Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the device, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, it's recommended to use a minimum of 2oz copper thickness and to avoid routing high-current traces under the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. It's also crucial to ensure good airflow and to avoid overheating the device.
  • The NTMTS6D0N15MC has built-in ESD protection, but it's still important to follow proper handling and storage precautions to prevent damage. Use an anti-static wrist strap or mat, and avoid touching the device's pins or exposed die. Store the devices in anti-static packaging, and handle them by the body or leads, not the pins.
  • The NTMTS6D0N15MC is a commercial-grade device, but onsemi does offer automotive-grade and high-reliability versions of similar devices. For high-reliability or automotive applications, consider using devices with the 'Q' or 'AX' prefix, which meet stricter quality and reliability standards.
  • The gate resistor value depends on the specific application, including the gate drive voltage, switching frequency, and PCB layout. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the datasheet and application notes for more detailed guidance and to perform simulations or experiments to determine the optimal value for your specific design.

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