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NTP011N15MC - onsemi

Description: • Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 m at VGS = 10 V, ID = 41 A • 50% Lower Qrr than other MOSFET Suppliers • Lowers Switching Noise/EMI • 100% UIL Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Complian

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PCB Footprints
NTP011N15MC - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_3
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3D Models
NTP011N15MC - onsemi  - 3D model - Transistor Outline, Vertical - TO-220_3
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NTP011N15MC Details

  • Manufacturer Part Number:

    NTP011N15MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    294 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    74.3 A

  • Drain-source On Resistance-Max:

    0.0109 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136.4 W

  • Pulsed Drain Current-Max (IDM):

    374 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP011N15MC Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components. A 2-3 oz copper thickness is recommended. Refer to onsemi's application note AND9007/D for more details.
  • To ensure proper biasing, make sure to follow the recommended operating conditions in the datasheet. This includes setting the gate-source voltage (VGS) between 2V to 5V, and the drain-source voltage (VDS) within the specified range. Also, ensure the device is operated within the recommended temperature range.
  • To prevent damage, handle the device by the body and avoid touching the leads or pins. Use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD). Avoid bending or flexing the leads, and use a soldering iron with a temperature below 260°C (500°F) to prevent thermal damage.
  • The gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a value between 1 kΩ to 10 kΩ. However, it's recommended to consult onsemi's application notes and simulation tools to determine the optimal value for your specific design.
  • The NTP011N15MC has several reliability and ruggedness features, including a rugged gate oxide, a high-temperature rating of 150°C, and a high-reliability package. It also has built-in protection against overvoltage, overcurrent, and electrostatic discharge (ESD). Refer to the datasheet for more details on the specific features and ratings.

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