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NTP082N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 81 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF); Optimized Capacitance; Excellent body diode performance (low Qrr, robust body diode); Typ. RDS(on) = 70 mΩ; 100% Avalanche Tested; RoHS Compliant

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NTP082N65S3HF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - NTP082N65S3HF-
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NTP082N65S3HF - onsemi  - 3D model - Transistor Outline, Vertical - NTP082N65S3HF-
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NTP082N65S3HF Details

  • Manufacturer Part Number:

    NTP082N65S3HF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    313 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP082N65S3HF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTP082N65S3HF is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet. Additionally, ensure that the gate-source voltage (Vgs) is within the recommended range of -2V to 10V, and the drain-source voltage (Vds) is within the recommended range of 0V to 650V.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet, and consider using thermal vias and a heat sink to dissipate heat efficiently.
  • To protect the NTP082N65S3HF from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure that the device is properly grounded during handling and assembly, and consider using ESD protection devices in the circuit.
  • The NTP082N65S3HF is manufactured by onsemi, which adheres to strict quality and reliability standards, including ISO 9001 and AEC-Q101. The device is also qualified to meet automotive and industrial reliability standards.

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NTP082N65S3HF Overview

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