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NTP095N65S3HF - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 66 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 82 mΩ

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PCB Footprints
NTP095N65S3HF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3LD
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NTP095N65S3HF - onsemi  - 3D model - Transistor Outline, Vertical - TO-220-3LD
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NTP095N65S3HF Details

  • Manufacturer Part Number:

    NTP095N65S3HF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2019-06-07

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    440 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    272 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP095N65S3HF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTP095N65S3HF is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this involves setting the gate-source voltage (Vgs) between 4.5V to 10V, and the drain-source voltage (Vds) within the recommended range for the specific application.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and thermal vias to dissipate heat. Ensure good thermal conductivity between the device and the heat sink or PCB. Follow the recommended land pattern and thermal design guidelines in the datasheet or application notes.
  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation, and ensure that all personnel handling the device are grounded. Avoid touching the device's pins or leads, and use ESD-protective packaging during storage and transportation.
  • The NTP095N65S3HF is designed to meet the reliability standards of the automotive industry. The device is qualified to AEC-Q101, which ensures a high level of reliability and lifespan. However, the actual lifespan will depend on the specific application, operating conditions, and environmental factors.

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NTP095N65S3HF Overview

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