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NTP360N80S3Z - onsemi

Description: MOSFET PowerN-Channel, SUPERFET III 800V 360mOhms 13A

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NTP360N80S3Z Details

  • Manufacturer Part Number:

    NTP360N80S3Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    32.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP360N80S3Z Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, derating the device's power dissipation and voltage ratings according to the temperature derating curves in the datasheet is crucial.
  • The NTP360N80S3Z has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.
  • Yes, the NTP360N80S3Z is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended qualification and testing procedures, and to ensure that the device meets the specific requirements of the application, such as AEC-Q101 or IATF 16949.
  • To troubleshoot issues with the device, start by reviewing the application circuit and PCB layout to ensure they meet the recommended design guidelines. Check for proper thermal design, voltage and current ratings, and ESD protection. Use oscilloscopes and thermal imaging cameras to monitor the device's behavior and identify potential issues.

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NTP360N80S3Z Overview

Use the download button to access the NTP360N80S3Z 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NTP36, or try a keyword search, such as Power Field-Effect Transistors

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