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NTP5D0N15MC - onsemi

Description: Shielded Gate MOSFET Technology; Max RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 97 A; 50% Lower Qrr than other MOSFET Suppliers; Lowers Switching Noise/EMI; 100% UIL Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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NTP5D0N15MC - onsemi - PCB symbol
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PCB Footprints
NTP5D0N15MC - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09 ISSUE AH
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3D Models
NTP5D0N15MC - onsemi - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09 ISSUE AH
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NTP5D0N15MC Details

  • Manufacturer Part Number:

    NTP5D0N15MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2020-04-10

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1014 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    139 A

  • Drain-source On Resistance-Max:

    0.005 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    214 W

  • Pulsed Drain Current-Max (IDM):

    818 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP5D0N15MC Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to provide a stable voltage and current to the device.
  • The device is sensitive to electrostatic discharge (ESD). Handling the device requires proper ESD protection, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging.
  • The optimal gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms to achieve a good balance between switching speed and EMI.
  • For high-power applications, thermal management is critical. A heat sink or a thermal interface material can be used to improve heat dissipation. The device's thermal pad should be connected to a large copper area on the PCB to dissipate heat.

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NTP5D0N15MC Overview

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