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NTTBC070NP10M5L - onsemi

Description: Small Footprint (5 x 6 mm) for Compact Design; Low RDS(on) to Minimize Conduction Losses; Low QG and Capacitance to Minimize Driver Losses; The Part is Not ESD Protected; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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NTTBC070NP10M5L - onsemi PCB footprint - Other - Other - NTTBC070NP10M5L-2
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NTTBC070NP10M5L - onsemi  - 3D model - Other - NTTBC070NP10M5L-2
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NTTBC070NP10M5L Details

  • Manufacturer Part Number:

    NTTBC070NP10M5L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511DG

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    26 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.5 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    14 W

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTBC070NP10M5L Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves using a 2-layer or 4-layer board with a solid ground plane, and placing the device near the edge of the board to minimize thermal resistance. A thermal pad on the bottom of the device should be connected to a large copper area on the PCB to dissipate heat. Additionally, using thermal vias and a heat sink can further improve thermal management.
  • To ensure proper biasing, the device requires a stable voltage supply, and the recommended operating conditions should be followed. The base-emitter voltage (VBE) should be around 0.65-0.75V, and the collector-emitter voltage (VCE) should be around 10-15V. The device should also be operated within the recommended current and power dissipation limits.
  • The NTTBC070NP10M5L has several reliability and ruggedness features, including a high-temperature rating of 150°C, a high-voltage rating of 700V, and a high-current rating of 10A. It also has built-in electrostatic discharge (ESD) protection and is designed to withstand high-energy surges and spikes.
  • The selection of external components depends on the specific application and operating conditions. In general, the resistors should be chosen based on the required current and voltage ratings, and the capacitors should be selected based on the required capacitance value and voltage rating. The datasheet provides recommended values for external components, and simulation tools can be used to optimize the component selection.
  • The NTTBC070NP10M5L is commonly used in high-power, high-voltage applications such as motor control, power supplies, and industrial power systems. It is also used in renewable energy systems, such as wind and solar power systems, and in electric vehicle charging systems.

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