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NTTFD018N08LC - onsemi

Description: Capable of 4.5V Gate drive; Advance Package Technology in Small Footprint (3x3mm); Low RDS(on); Low Qg and Capacitance

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NTTFD018N08LC - onsemi  - 3D model
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NTTFD018N08LC Details

  • Manufacturer Part Number:

    NTTFD018N08LC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WQFN-12

  • Manufacturer Package Code:

    510CJ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Date Of Intro:

    2020-03-30

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    32 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    S-PQCC-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    349 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFD018N08LC Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NTTFD018N08LC is 150°C. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper biasing, make sure to follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Typically, Vgs should be between 2V to 5V, and Vds should not exceed 30V. Additionally, ensure the device is operated within the recommended current ratings.
  • For optimal thermal management, it's recommended to use a PCB with a thermal pad and a heat sink. Ensure the device is mounted on a copper plane with a minimum thickness of 1 oz. Also, keep the PCB layout compact and symmetrical to minimize thermal resistance.
  • Yes, the NTTFD018N08LC is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and EMI.
  • To protect the NTTFD018N08LC from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store it in an anti-static bag or container. Additionally, ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

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NTTFD018N08LC Overview

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