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NTTFD4D0N04HLTWG - onsemi

Description: MOSFET, Power, 40V POWERTRENCH® Power Clip Half Bridge Configuration

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NTTFD4D0N04HLTWG - onsemi PCB footprint - Other - Other - NTTFD4D0N04HLTWG-2
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NTTFD4D0N04HLTWG - onsemi  - 3D model - Other - NTTFD4D0N04HLTWG-2
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NTTFD4D0N04HLTWG Details

  • Manufacturer Part Number:

    NTTFD4D0N04HLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WQFN-12

  • Package Description:

    WQFN-12

  • Manufacturer Package Code:

    510CJ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2020-02-19

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    67 mJ

  • Configuration:

    2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PQCC-N12

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    12

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.7 W

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    349 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFD4D0N04HLTWG Frequently Asked Questions (FAQs)

  • The NTTFD4D0N04HLTWG has an operating temperature range of -55°C to 150°C, as specified in the datasheet.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, consider the device's thermal management requirements and ensure adequate heat sinking.
  • For optimal performance, follow the recommended PCB layout guidelines provided in the datasheet or onsemi's application notes. Key considerations include minimizing parasitic inductance, using a solid ground plane, and ensuring proper thermal management.
  • To prevent electrostatic discharge (ESD) damage, follow proper ESD handling procedures, such as using an ESD wrist strap, mat, or workstation. Ensure that all equipment and tools are properly grounded and that the device is stored in an ESD-safe environment.
  • onsemi performs various reliability and qualification tests, including temperature cycling, humidity testing, and electrical overstress testing, to ensure the device meets industry standards and specifications. Refer to the datasheet or onsemi's quality and reliability documentation for more information.

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