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NVF3055-100T1G - onsemi

Description: Last Shipments - Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ

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PCB Footprints
NVF3055-100T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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3D Models
NVF3055-100T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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NVF3055-100T1G Details

  • Manufacturer Part Number:

    NVF3055-100T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    SOT-223, 3 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    155 pF

  • JEDEC-95 Code:

    TO-261

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    105 ns

  • Turn-on Time-Max (ton):

    50 ns

NVF3055-100T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Monitor the device's junction temperature (TJ) and adjust the operating conditions accordingly.
  • The device has internal ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and handling. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.
  • Yes, the device is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards or customer requirements.
  • Consult the datasheet and application notes for troubleshooting guidelines. Check the device's operating conditions, power supply, and PCB layout. Use oscilloscopes or logic analyzers to debug the issue. Contact onsemi support for further assistance if needed.

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NVF3055-100T1G Overview

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