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NVH040N65S3F - onsemi

Description: Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss; Best in Class body diode; Internal Rg; Lower RDS(on) / Same Packages

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NVH040N65S3F Details

  • Manufacturer Part Number:

    NVH040N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2020-09-22

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1009 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TUBE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    446 W

  • Pulsed Drain Current-Max (IDM):

    162.5 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVH040N65S3F Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased during startup, it is recommended to use a soft-start circuit to slowly ramp up the gate voltage, and to use a voltage regulator to provide a stable supply voltage. Additionally, a pull-up resistor on the gate pin can help to prevent unwanted turn-on during power-up.
  • The maximum allowed voltage on the gate pin is 20V, as specified in the datasheet. Exceeding this voltage can cause damage to the device. It is recommended to use a voltage limiter or a zener diode to clamp the gate voltage to a safe level.
  • To handle the high di/dt rating of this device, it is recommended to use a snubber circuit or a gate resistor to slow down the turn-on and turn-off times, reducing the di/dt stress on the device. Additionally, using a low-inductance PCB layout and minimizing the distance between the device and the load can help to reduce the di/dt stress.
  • The recommended operating frequency range for this device is up to 100kHz, as specified in the datasheet. Operating the device at frequencies above this range can cause increased losses and reduced efficiency.

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NVH040N65S3F Overview

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