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NVLJWD023N04CLTAG - onsemi

Description: UDFN Package with Exposed Drain Pads; Low Profile UDFN 2.0x2.0x0.55 mm ; Ultra Low RDS(on); Optimized Gate Charge; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVLJWD023N04CLTAG - onsemi PCB footprint - Other - Other - WDFNW6 2.2x2.3, 0.8P CASE 515AS ISSUE O
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3D Models
NVLJWD023N04CLTAG - onsemi  - 3D model - Other - WDFNW6 2.2x2.3, 0.8P CASE 515AS ISSUE O
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NVLJWD023N04CLTAG Details

  • Manufacturer Part Number:

    NVLJWD023N04CLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW6 2.2x2.3, 0.8P

  • Package Description:

    WDFNW6, 6 PIN

  • Manufacturer Package Code:

    515AS

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    104 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVLJWD023N04CLTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a large copper area for heat dissipation. Refer to the onsemi application note AND8407/D for more details.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider using a heat sink or a thermally enhanced package.
  • The NVLJWD023N04CLTAG has built-in ESD protection, but it's still important to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging.
  • Yes, the NVLJWD023N04CLTAG is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it's essential to follow the recommended operating conditions and ensure that the device is used within its specified ratings.
  • The recommended soldering and assembly techniques for the NVLJWD023N04CLTAG involve using a soldering iron with a temperature of 260°C (max), a soldering time of 3 seconds (max), and a peak reflow temperature of 240°C. Refer to the onsemi application note AND8408/D for more details.

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NVLJWD023N04CLTAG Overview

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