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NVLJWS011N04CLTAG - onsemi

Description: wDFNW6 Package with Exposed Drain Pads; Low Profile UDFN 2.05mmx2.05mm; Ultra Low RDS(on); Optimized Gate Charge; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVLJWS011N04CLTAG - onsemi PCB footprint - Other - Other - WDFNW6 2.05x2.05, 0.65P CASE 515AD ISSUE O
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3D Models
NVLJWS011N04CLTAG - onsemi  - 3D model - Other - WDFNW6 2.05x2.05, 0.65P CASE 515AD ISSUE O
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NVLJWS011N04CLTAG Details

  • Manufacturer Part Number:

    NVLJWS011N04CLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW6 2.05x2.05, 0.65P

  • Package Description:

    WDFNW6, 6 PIN

  • Manufacturer Package Code:

    515AD

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    129 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVLJWS011N04CLTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable thermal management system, and consider derating the device's power handling capabilities.
  • Key considerations for EMI and RFI shielding include using a metal shield around the device, keeping the shield grounded, and ensuring the PCB layout is designed to minimize radiation and susceptibility to electromagnetic interference.
  • To select the correct input and output capacitors, consider the device's operating frequency, output current, and voltage ripple requirements. Choose capacitors with suitable capacitance, voltage rating, and ESR values to ensure stable operation and minimize noise.
  • The recommended soldering and rework techniques for the NVLJWS011N04CLTAG involve using a soldering iron with a temperature range of 250°C to 260°C, a solder with a melting point of 217°C to 220°C, and following the manufacturer's recommended rework procedures to avoid damaging the device.

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NVLJWS011N04CLTAG Overview

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