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NVLJWS5D0N03CLTAG - onsemi

Description: UDFN Package with Exposed Drain Pads; Low Profile UDFN 2.0x2.0x0.55 mm ; Ultra Low RDS(on); Optimized Gate Charge; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVLJWS5D0N03CLTAG - onsemi PCB footprint - Other - Other - WDFNW6 2.05x2.05, 0.65P CASE 515AD ISSUE O
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NVLJWS5D0N03CLTAG - onsemi  - 3D model - Other - WDFNW6 2.05x2.05, 0.65P CASE 515AD ISSUE O
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NVLJWS5D0N03CLTAG Details

  • Manufacturer Part Number:

    NVLJWS5D0N03CLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFNW6 2.05x2.05, 0.65P

  • Package Description:

    WDFNW-6

  • Manufacturer Package Code:

    515AD

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    101 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    77 A

  • Drain-source On Resistance-Max:

    0.0066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    317 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVLJWS5D0N03CLTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using thermal interface materials and following proper PCB design guidelines.
  • For EMI and RFI shielding, consider using a metal shield or a shielded enclosure, and ensure that the PCB layout is designed to minimize radiation. Additionally, use filtering components, such as ferrite beads or common-mode chokes, to reduce electromagnetic interference.
  • To troubleshoot issues related to the internal voltage regulator, check the input voltage, output voltage, and current consumption. Verify that the input voltage is within the recommended range, and ensure that the output voltage is stable. Also, check for any signs of overheating or excessive current draw.
  • The recommended testing and validation procedures for this device include functional testing, parametric testing, and environmental testing. Functional testing involves verifying the device's operation under various conditions, while parametric testing involves measuring the device's electrical characteristics. Environmental testing involves subjecting the device to various environmental stresses, such as temperature, humidity, and vibration.

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NVLJWS5D0N03CLTAG Overview

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