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NVMFD5C478NT1G - onsemi

Description: Low on resistance; High current capability; AEC−Q101 Qualified and PPAP Capable; NVMFD5C478NWF − Wettable Flanks Product; RoHS Compliant

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PCB Footprints
NVMFD5C478NT1G - onsemi PCB footprint - Other - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NVMFD5C478NT1G - onsemi  - 3D model - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NVMFD5C478NT1G Details

  • Manufacturer Part Number:

    NVMFD5C478NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-12-17

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    9.8 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    23 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C478NT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable thermal interface material, and implement a robust thermal management system. Additionally, consider using a heat sink or a fan to dissipate heat.
  • Using a lower voltage than the recommended 5V may result in reduced performance, increased latency, and potential errors. Using a higher voltage may cause overheating, reduced lifespan, and potentially damage the device. It's essential to operate within the recommended voltage range to ensure reliable operation.
  • It's recommended to follow a controlled power sequencing and ramp-up time during startup to prevent damage to the device. A slow and controlled voltage ramp-up (e.g., 1-2 ms) and a power-on reset (POR) circuit can help ensure a reliable startup.
  • The NVMFD5C478NT1G has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly, testing, and storage. Use ESD-safe materials, wrist straps, and mats to prevent damage from static electricity.

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NVMFD5C478NT1G Overview

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