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NVMFS015N10MCLT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS (ON); Low QG and Capacitance; Wettable Flank Option available; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS015N10MCLT1G - onsemi PCB footprint - Other - Other - DFN5-2022
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NVMFS015N10MCLT1G - onsemi  - 3D model - Other - DFN5-2022
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NVMFS015N10MCLT1G Details

  • Manufacturer Part Number:

    NVMFS015N10MCLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Date Of Intro:

    2019-01-07

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    469 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    47.1 A

  • Drain-source On Resistance-Max:

    0.0183 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    59.5 W

  • Pulsed Drain Current-Max (IDM):

    259 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS015N10MCLT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NVMFS015N10MCLT1G is a 3.3mm x 3.3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • The NVMFS015N10MCLT1G requires a specific power sequencing to ensure proper operation. The datasheet recommends powering up the device in the following order: VCC, then VCCQ, and finally the input signals.
  • The maximum operating frequency for NVMFS015N10MCLT1G is 100 MHz. However, the actual operating frequency may be limited by the system design and the specific application.
  • The NVMFS015N10MCLT1G has an active-low reset input (RSTN) that must be asserted low for at least 10 ns to reset the device. The reset function can be implemented using an external reset generator or a microcontroller.
  • The NVMFS015N10MCLT1G has a maximum junction temperature (TJ) of 150°C. To ensure reliable operation, it is recommended to implement a thermal management strategy, such as using a heat sink or a thermal interface material, to keep the device temperature below 125°C.

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NVMFS015N10MCLT1G Overview

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