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NVMFS016N10MCLT1G - onsemi

Description: Small Footprint (5x6mm); Low RDS(on); Low QG and Capacitance; AEC-Q101 Qualified and PPAP Capablwe; RoHS Compliant

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NVMFS016N10MCLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS016N10MCLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS016N10MCLT1G Details

  • Manufacturer Part Number:

    NVMFS016N10MCLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    358 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    64 W

  • Pulsed Drain Current-Max (IDM):

    243 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NVMFS016N10MCLT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS016N10MCLT1G is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically from -55°C to 150°C.
  • To ensure reliable data retention in NVMFS016N10MCLT1G, it's crucial to follow the recommended usage and storage guidelines. This includes avoiding exposure to extreme temperatures, humidity, and radiation. Additionally, ensure that the device is powered down correctly during storage, and avoid applying voltage to the device during storage.
  • The maximum number of program/erase cycles for NVMFS016N10MCLT1G is 100,000 cycles, as specified in the datasheet. However, it's essential to note that the actual number of cycles may vary depending on the usage and operating conditions.
  • In case of errors during programming or erasing in NVMFS016N10MCLT1G, it's recommended to follow the error handling procedures outlined in the datasheet. This may include retrying the operation, checking for device faults, or performing a reset. It's also essential to implement error detection and correction mechanisms in your application code.
  • The recommended power-up sequence for NVMFS016N10MCLT1G is to apply VCC first, followed by VPP, and then the clock signal. This ensures that the device powers up correctly and minimizes the risk of latch-up or other power-related issues.

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