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NVMFS025P04M8LT1G - onsemi

Description: Small Footprint (5 x 6 mm); Low RDS on ; Low Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant

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PCB Footprints
NVMFS025P04M8LT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS025P04M8LT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS025P04M8LT1G Details

  • Manufacturer Part Number:

    NVMFS025P04M8LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    152 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    19 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    44.1 W

  • Pulsed Drain Current-Max (IDM):

    204 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS025P04M8LT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NVMFS025P04M8LT1G is a 2.5mm x 2.5mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • The NVMFS025P04M8LT1G has a thermal pad on the bottom of the package, which should be connected to a thermal pad on the PCB. A thermal interface material (TIM) can be used to improve heat transfer. The datasheet provides thermal resistance and power dissipation guidelines.
  • The recommended operating voltage range for NVMFS025P04M8LT1G is 2.7V to 3.6V. Operating the device outside of this range may affect its performance and reliability.
  • To ensure the reliability of NVMFS025P04M8LT1G in high-temperature applications, follow the recommended operating temperature range (-40°C to 125°C), use a suitable thermal management design, and consider using a thermal sensor to monitor the device temperature.
  • The maximum allowable current for NVMFS025P04M8LT1G is 1.5A. Exceeding this current may cause the device to overheat or fail.

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NVMFS025P04M8LT1G Overview

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