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NVMFS027N10MCLT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS027N10MCLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS027N10MCLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS027N10MCLT1G Details

  • Manufacturer Part Number:

    NVMFS027N10MCLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5,8 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-02-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    414 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    27 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.7 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    124 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS027N10MCLT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. A 4-layer PCB with a thermal layer is recommended. Refer to the onsemi application note AND9233/D for more details.
  • To ensure reliable operation in high-temperature environments, it is essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure proper airflow. Additionally, consider using a heat sink or a thermally enhanced package option. Always check the device's operating temperature range and derate the power dissipation accordingly.
  • The NVMFS027N10MCLT1G has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment. Avoid touching the device pins or exposing them to static charges.
  • The NVMFS027N10MCLT1G is not specifically designed or tested for radiation-hardened applications. If you need a radiation-hardened device, consider using a different part number or consulting with onsemi's radiation-hardened product portfolio.
  • The recommended storage condition for the NVMFS027N10MCLT1G is in a dry, cool place with a temperature range of -40°C to 125°C and relative humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures during storage.

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