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NVMFS5C442NLWFET1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); AECQ101 Qualified and PPAP Capable; NVMFS5C442NLWF Wettable Flank Option; Low QG and Capacitance; RoHS Compliant

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NVMFS5C442NLWFET1G - onsemi PCB footprint - Other - Other - NVMFS5C442NLAFT1G-2
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NVMFS5C442NLWFET1G - onsemi  - 3D model - Other - NVMFS5C442NLAFT1G-2
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NVMFS5C442NLWFET1G Details

  • Manufacturer Part Number:

    NVMFS5C442NLWFET1G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    265 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    130 A

  • Drain-source On Resistance-Max:

    0.0037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    37 pF

  • JESD-30 Code:

    R-PSSO-F4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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NVMFS5C442NLWFET1G Overview

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