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NVMFS5C628NT1G - onsemi

Description: Low RDS(on); Low QG and Gate capacitance; Industry standard 5x6mm Small Footprint; NVMFS5C628NWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVMFS5C628NT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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NVMFS5C628NT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_1
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NVMFS5C628NT1G Details

  • Manufacturer Part Number:

    NVMFS5C628NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5,8 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    565 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    150 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C628NT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C628NT1G is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically from -55°C to 150°C.
  • To ensure reliable data retention in NVMFS5C628NT1G, it's crucial to follow the recommended usage and storage guidelines. This includes avoiding exposure to extreme temperatures, humidity, and radiation. Additionally, ensure that the device is powered down correctly during storage, and avoid applying voltage to the device during storage.
  • The maximum number of erase cycles for NVMFS5C628NT1G is 100,000 cycles, as specified in the datasheet. However, it's essential to note that the actual number of erase cycles may vary depending on the usage and operating conditions.
  • Page and block management in NVMFS5C628NT1G requires careful consideration to ensure optimal performance and data integrity. It's recommended to use a wear-leveling algorithm to distribute write cycles evenly across the device, and to implement a garbage collection mechanism to reclaim invalid or obsolete data.
  • When using NVMFS5C628NT1G in a high-reliability application, it's essential to consider the device's failure modes and implement appropriate mitigations. This may include using error correction codes, redundant storage, and fault-tolerant designs to ensure continued operation in the event of device failure.

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