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NVMFS5C680NLT1G - onsemi

Description: AEC−Q101 Qualified and PPAP Capable; RoHS Compliant; Low RDS(on); Low QG and Gate capacitance; Industry standard 5 x 6 mm package Industry; Best in-class FOM (RDS(ON) x QG); NVMFS5C680NLWF − Wettable Flanks Product

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NVMFS5C680NLT1G Details

  • Manufacturer Part Number:

    NVMFS5C680NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    44.6 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8.1 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    87 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C680NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C680NLT1G is -40°C to 125°C.
  • To ensure data integrity during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the flash memory.
  • The maximum number of erase cycles for NVMFS5C680NLT1G is 100,000 cycles.
  • No, NVMFS5C680NLT1G is not designed for use in radiation-intensive environments. If you need a radiation-hardened device, you should consider a different product.
  • In the event of a page erase error, it is recommended to retry the erase operation up to 3 times. If the error persists, the device should be replaced.

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NVMFS5C680NLT1G Overview

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Part Image NVMFS5C680NLWFT1G onsemi

Power Field-Effect Transistor, 8.1A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET