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NVMFS5H610NLT1G - onsemi

Description: Power MOSFET 60 V, 10 mΩ, 48 A, Single N−Channel

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NVMFS5H610NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS5H610NLT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS5H610NLT1G Details

  • Manufacturer Part Number:

    NVMFS5H610NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    175 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    243 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5H610NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS5H610NLT1G is 2.7V to 3.6V, as specified in the datasheet. However, it's essential to note that the device can tolerate a voltage range of 2.5V to 4.5V for short durations, but prolonged operation outside the recommended range may affect its performance and reliability.
  • To ensure data integrity, it's crucial to follow the recommended power-down and power-up sequences outlined in the datasheet. Additionally, implement a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized and configured before accessing the memory. It's also recommended to use a capacitor to filter out any voltage glitches during power-up.
  • The maximum operating frequency for NVMFS5H610NLT1G is 104 MHz. Operating the device at higher frequencies can increase power consumption, which may affect the overall system power budget. It's essential to balance the operating frequency with power consumption requirements to ensure optimal system performance.
  • The NVMFS5H610NLT1G provides a status register that indicates the outcome of memory access operations. Implement a robust error handling mechanism to detect and respond to errors, such as retrying failed operations or using error correction codes. It's also recommended to implement a mechanism to detect and handle exceptions, such as page or sector erase failures, to prevent data corruption and ensure system reliability.
  • The NVMFS5H610NLT1G has a maximum operating temperature range of -40°C to 85°C. To ensure reliable operation in high-temperature environments, implement proper thermal management techniques, such as heat sinking, thermal interface materials, and airflow management. It's also essential to follow the recommended PCB design guidelines and thermal design considerations outlined in the datasheet.

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