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NVMFS6D1N08HT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant; NVMFSW6D1N08H − Wettable Flank Option

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NVMFS6D1N08HT1G - onsemi PCB footprint - Other - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS6D1N08HT1G - onsemi  - 3D model - Other - DFN5 5x6 , 1.27P (SO−8FL) CASE 488AA ISSUE N_24
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NVMFS6D1N08HT1G Details

  • Manufacturer Part Number:

    NVMFS6D1N08HT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2018-08-10

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    465 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    89 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    468 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS6D1N08HT1G Frequently Asked Questions (FAQs)

  • Onsemi provides a reference design guide for PCB layout and thermal management in their application note AND9173/D. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • Onsemi recommends using an external overvoltage protection (OVP) circuit, such as a zener diode or a dedicated OVP IC, to protect the device from voltage transients and surges. The OVP circuit should be designed to trigger at a voltage slightly above the maximum recommended operating voltage.
  • Although not explicitly stated in the datasheet, the maximum allowed current for the gate driver output is typically limited by the internal resistance and the package's thermal capabilities. As a general guideline, it's recommended to keep the peak current below 1 A to ensure reliable operation and prevent overheating.
  • Yes, the NVMFS6D1N08HT1G is qualified for automotive and high-reliability applications. Onsemi provides additional documentation, such as the Automotive Electronics Council (AEC) qualification report, and supports the device with a dedicated automotive-grade production flow.
  • Onsemi provides guidelines for EMC and EMI compliance in their application note AND9174/D. It's essential to follow these guidelines, which include PCB layout considerations, filtering, and shielding, to ensure compliance with relevant EMC and EMI standards.

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