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NVMFWS0D7N04XMT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFWS0D7N04XMT1G - onsemi PCB footprint - Other - Other - DFNW5 4.90x5.90x1.00, 1.27P CASE 507BA ISSUE B
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NVMFWS0D7N04XMT1G - onsemi  - 3D model - Other - DFNW5 4.90x5.90x1.00, 1.27P CASE 507BA ISSUE B
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NVMFWS0D7N04XMT1G Details

  • Manufacturer Part Number:

    NVMFWS0D7N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    987 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    331 A

  • Drain-source On Resistance-Max:

    0.0007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    112 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    134 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NVMFWS0D7N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom of the package. Refer to the onsemi application note AND9007/D for more details.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating conditions, use a suitable thermal design, and consider derating the device's power dissipation. Additionally, ensure that the device is properly soldered and that the PCB is designed to minimize thermal resistance.
  • The NVMFWS0D7N04XMT1G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the NVMFWS0D7N04XMT1G is AEC-Q101 qualified, making it suitable for automotive applications. However, ensure that the device is used within its recommended operating conditions and that the system design meets the required automotive standards.
  • The recommended storage condition for the NVMFWS0D7N04XMT1G is in a dry, cool place with a temperature range of -40°C to 125°C and relative humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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NVMFWS0D7N04XMT1G Overview

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