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NVMFWS1D3N04XMT1G - onsemi

Description: Wettable Flank Option; Low RDS(on); RoHS Compliant; Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; Small Footprint (5x6 mm)

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NVMFWS1D3N04XMT1G - onsemi PCB footprint - Other - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS1D3N04XMT1G - onsemi  - 3D model - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFWS1D3N04XMT1G Details

  • Manufacturer Part Number:

    NVMFWS1D3N04XMT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFNW5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    306 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0013 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23.3 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFWS1D3N04XMT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance can be found in the onsemi application note AND9093/D, which provides guidelines for thermal design and layout considerations.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal management techniques such as heat sinks or thermal interfaces to reduce the device junction temperature.
  • The maximum allowed voltage stress on the NVMFWS1D3N04XMT1G is specified in the datasheet as 20V. Exceeding this voltage may cause permanent damage to the device.
  • To prevent electrostatic discharge (ESD) damage, follow proper ESD handling and assembly procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. The device is designed to withstand ESD events up to 2kV according to the Human Body Model (HBM).
  • The recommended soldering profile for the NVMFWS1D3N04XMT1G can be found in the onsemi application note AND9101/D, which provides guidelines for soldering and assembly.

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NVMFWS1D3N04XMT1G Overview

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