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NVMTS0D4N04CLTXG - onsemi

Description: Small Footprint (8x8 mm); Low RDS(on); Wettable Flank Option; Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVMTS0D4N04CLTXG - onsemi PCB footprint - Other - Other - DFNW8 8.3x8.4, 2P CASE 507AP ISSUE A
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3D Models
NVMTS0D4N04CLTXG - onsemi  - 3D model - Other - DFNW8 8.3x8.4, 2P CASE 507AP ISSUE A
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NVMTS0D4N04CLTXG Details

  • Manufacturer Part Number:

    NVMTS0D4N04CLTXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Package Description:

    DFNW-8

  • Manufacturer Package Code:

    507AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-08-06

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    4454 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    553.8 A

  • Drain-source On Resistance-Max:

    0.00064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    390 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    244 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMTS0D4N04CLTXG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVMTS0D4N04CLTXG is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure the device is operated within the recommended operating conditions.
  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal via. Ensure good thermal conductivity and minimal thermal resistance between the device and the heat sink.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input/output pins to protect the device from electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.
  • Follow the recommended soldering temperature and time profiles specified in the datasheet. Use a soldering iron with a temperature range of 250°C to 260°C, and ensure the device is properly aligned and secured during assembly.

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NVMTS0D4N04CLTXG Overview

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