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NVMTS1D2N08H - onsemi

Description: Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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Symbol
NVMTS1D2N08H - onsemi - PCB symbol
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PCB Footprints
NVMTS1D2N08H - onsemi PCB footprint - Other - Other - NVMTS1D2N08H-2
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3D Models
NVMTS1D2N08H - onsemi - 3D model - Other - NVMTS1D2N08H-2
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NVMTS1D2N08H Details

  • Manufacturer Part Number:

    NVMTS1D2N08H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Package Description:

    DFNW-8

  • Manufacturer Package Code:

    507AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    3170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    337 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    43 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMTS1D2N08H Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVMTS1D2N08H is -40°C to 150°C.
  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermal management strategy to keep the device within its recommended operating temperature range.
  • The recommended PCB layout for the NVMTS1D2N08H involves using a thermal pad and thermal vias to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal performance. Consult the onsemi application note for more detailed guidance.
  • When handling the NVMTS1D2N08H, ensure that you follow proper electrostatic discharge (ESD) precautions and use a high-voltage probe or test fixture to prevent damage to the device. Use a variable power supply to gradually increase the voltage and current to the recommended ratings.
  • To ensure EMC, follow proper PCB layout and shielding guidelines, and consider using a common-mode choke or ferrite bead to filter out electromagnetic interference (EMI). Additionally, ensure that the device is operated within its specified frequency range.

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NVMTS1D2N08H Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like NVMTS, or try a keyword search, such as Power Field-Effect Transistors

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